The use of sample positioning to control defect creation by oxygen plasma in isotopically labelled bilayer graphene membranes.

Monolayer and isotopically labelled bilayer graphene membranes were prepared on grids for transmission electron microscopy (TEM). In order to create defects in the graphene layers in a controlled way, we studied the sensitivity of the individual graphene layers to the oxygen plasma treatment. We tested samples with different configurations by varying the order of the transfer of layers and changing the orientation of the samples with respect to the plasma chamber. Using Raman spectroscopy, HRTEM and X-ray photoelectron spectroscopy, we demonstrated defect formation and determined the quantity and chemical composition of the defects. By keeping the sample structure and the setup of the experiment unchanged, the significant role of the sample orientation with respect to the chamber was demonstrated. The effect was accounted for by the variation of the accessibility of the sample surface for the reactive species. Therefore, this effect can be used to control the degree of damage in each layer, resulting in differing numbers of defects present on each side of the sample.

Towards Catalytically Active Porous Graphene Membranes with Pulsed Laser Deposited Ceria Nanoparticles.

Porous graphene with catalytically active ceria nanometre-size particles were prepared using pulsed laser deposition (PLD) on graphene produced through chemical vapour deposition (CVD). The reported process provided porous graphene containing ceria nanoparticles as confirmed by HR TEM and XPS. Isotopically labelled 13 C graphene was employed to study desorption of the species containing carbon. Methanol adsorption was utilised to probe the nature of the catalytic activity of prepared ceria decorated graphene. The important role of graphene support for the stabilization of reduced ceria nanoparticles was finally confirmed. Increased dehydrogenation activity of graphene with ceria nanoparticles leading to CO and H2 formation was demonstrated.

Graphene-enhanced Raman scattering on single layer and bilayers of pristine and hydrogenated graphene.

Graphene-enhanced Raman scattering (GERS) on isotopically labelled bilayer and a single layer of pristine and partially hydrogenated graphene has been studied. The hydrogenated graphene sample showed a change in relative intensities of Raman bands of Rhodamine 6 G (R6G) with different vibrational energies deposited on a single layer and bilayer graphene. The change corresponds qualitatively to different doping of graphene in both areas. Pristine graphene sample exhibited no difference in doping nor relative intensities of R6G Raman peaks in the single layer and bilayer areas. Therefore, it was concluded that strain and strain inhomogeneities do not affect the GERS. Because of analyzing relative intensities of selected peaks of the R6G probe molecules, it is possible to obtain these results without determining the enhancement factor and without assuming homogeneous coverage of the molecules. Furthermore, we tested the approach on copper phtalocyanine molecules.

Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene.

The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult-as is the case of graphene on noncatalytic substrates such as Si-inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.

Strong and efficient doping of monolayer MoS2 by a graphene electrode.

The efficient manipulation of the optoelectronic properties of layered semiconductors is essential for future applications of these unique materials. Here, we demonstrate that single-layer, large-area graphene can serve as a conductive spacer between an electrolyte solution and single-layer MoS2. In situ Raman and photoluminescence (PL) spectroscopies were employed to monitor the charge transfer from graphene to MoS2. The Raman G and 2D bands were used to quantify the carrier concentration in graphene. The high efficiency of the charge transfer via graphene in a broad carrier concentration range of ±2.1 × 1013 cm-2 was documented by the extreme sensitivity of the MoS2 Raman mode to the electron-doping (shift rate of ∼2.5 cm-1/1 × 1013 cm-2 electron concentration) and the high sensitivity of the PL yield, which drops by more than one and two orders of magnitude in the hole and electron doping regimes, respectively. The easy implementation, and the lithography-free effectiveness of the setup, in terms of the achievable carrier concentration range and the charge-transfer efficiency, could be an asset in near-future research and in the development of optoelectronic devices.